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| 2SJ471 Silicon P Channel DV-L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -30 20 -30 -120 -30 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max -- -- -10 10 -2.0 35 60 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns I F = -30A, VGS = 0 I F = -30A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS = 0 I D = -1mA, VDS = -10V I D = -15A, VGS = -10V Note3 I D = -15A, VGS = -4V Note3 I D = -15A, VDS = -10V Note3 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -15A RL = 0.67 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test t d(on) tr t d(off) tf VDF t rr 3 2SJ471 Main Characteristics Power vs. Temperature Derating 40 Channel Dissipation Pch (W) -500 -200 Maximun Safe Operation Area Drain Current I D (A) 10 s 10 PW C D 30 -100 -50 -20 -10 -5 -2 -1 -0.5 0 s 1 m s = 20 10 m (1 s ot 10 Operation in this area is limited by R DS(on) Ta = 25 C n tio ra pe O sh ) ) (T c = 25 C 0 50 100 150 200 Case Temperature Tc (C) -3 -0.1 -0.3 -1 -10 -30 -100 Drain to Source Voltage V DS (V) -50 Typical Output Characteristics -10 V -6 V -5 V -4.5 V -4 V Typical Transfer Characteristics -50 Tc = -25C 75C 25C -30 Drain Current I D (A) -3.5 V -30 -3 V -20 VGS = -2.5 V Pulse Test 0 -2 -4 -6 -8 -10 Drain Current I D (A) -40 -40 -20 -10 -10 V DS = -10 V Pulse Test 0 -1 -2 -3 -4 -5 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) 4 2SJ471 Drain to Source Saturation Voltage vs. Gate to Source Voltage -1.0 Drain to Source Saturation Voltage VDS(on) (V) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 VGS = -4 V -0.8 -0.6 I D = -20 A -0.4 -10 A -0.2 -5 A Drain to Source on State Resistance R DS(on) ( ) 0.05 0.02 -10 V 0 -8 -4 -12 -16 -20 Gate to Source Voltage VGS (V) 0.01 -1 -2 -5 -10 -20 Drain Current I D (A) -50 Foward Transfer Admittance |yfs| (S) Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature 0.10 Foward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.2 V DS = -10 V Pulse Test 75 C 25 C Tc = -25 C 0.08 I D = -20 A V GS = -4 V 0.06 -5, -10 A 0.04 -5, -10, -20 A -10 V Pulse Test 0 40 80 120 Cate Temperature Tc (C) 160 0.02 0 -40 0.1 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 Drain Current I D (A) 5 2SJ471 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 20 10 di / dt = 50 A / s V GS = 0, Ta = 25 C -5 -10 -20 -50 Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 5000 2000 1000 500 Crss 200 100 0 VGS = 0 f = 1 MHz -4 -8 -12 -16 -20 Ciss Coss 5 -0.1-0.2 -0.5 -1 -2 Reverse Drain Current I DR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage V DS (V) 0 Gate to Source Voltage VGS (V) V DD = -5 V -10 V -25 V 0 1000 500 Switching Time t (ns) 200 100 50 Switching Characteristics -10 -4 t d(off) -20 V DS V DD = -25 V -10 V -5 V I D = -30 A 0 16 32 V GS -8 tr tf -30 -12 t d(on) 20 10 V GS = -10 V, V DD = -10 V duty < 1 % -40 -50 -16 48 64 -20 80 Gate Charge Qg (nc) 5 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 Drain Current I D (A) 6 2SJ471 Reverse Drain Current vs. Source to Drain Voltage -50 Reverse Drain Current I DR (A) Pulse Test -40 -30 -10 V -5 V V GS = 0, 5 V -20 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermao Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM PW T D= 0.03 0.01 10 0.02 1 lse 0.0 pu ot h 1s PW T 100 1m 10 m Pulse Width PW (S) 100 m 1 10 7 2SJ471 Switching Timen Test Circuit Vin Monitor D.U.T. RL 90% Vin 10 V 50 V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveform 8 2SJ471 Package Dimensions Unit: mm 10.0 0.3 2.7 0.2 f 3.2 0.2 0.6 0.1 2.54 0.5 2.54 0.5 4.1 0.3 2.5 0.2 0.7 0.1 Hitachi Code TO-220CFM -- EIAJ -- JEDEC 13.6 1.0 1.0 0.2 1.15 0.2 12.0 0.3 4.45 0.3 15.0 0.3 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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